Question

How will the delay and active power per device change as you increase the doping density of both the N- and the P-MOSFET?

Answer 1

hello your question is incomplete attached below is the missing part of the question

Consider an inverter operating a power supply voltage VDD. Assume that matched condition for this inverter. Make the necessary assumptions to get to an answer for the following questions.

answer : Nd ∝ rt

Step-by-step explanation:

Determine how the delay and active power per device will change as the doping density of N- and P-MOSFET increases

Pactive ( active power ) = Efs * F

Pactive =
`(q^2Nd^2*Xn^2)/(6Eo) * f`

also note that ; Pactive ∝ Nd2 (

tD = K .
`(Vdd)/((Vdd - Vt )^2)` since K = constant

Hence : Nd ∝ rt