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Assume the transistor is biased in the saturation region at VGS 4 V. (a) Calculate the ideal cutoff frequency. (b) Assume that the gate oxide overlaps both the source and drain contacts by 0.75 m. If a
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Assume the transistor is biased in the saturation region at VGS 4 V. (a) Calculate the ideal cutoff frequency. (b) Assume that the gate oxide overlaps both the source and drain contacts by 0.75 m. If a load resistance of RL 10 k is connected to the output, calculate the cutoff frequency.

User Chanaka Lakmal
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Answer:

hello your question is incomplete attached below is the complete question and the detailed solution

Answer: A) 5.17 GHz

B) 1.01 GHz

Step-by-step explanation:

Assuming the transistor is biased and considering the two conditions as given in A and B attached below is a detailed solution to the given problem

Assume the transistor is biased in the saturation region at VGS 4 V. (a) Calculate-example-1
Assume the transistor is biased in the saturation region at VGS 4 V. (a) Calculate-example-2
Assume the transistor is biased in the saturation region at VGS 4 V. (a) Calculate-example-3
Assume the transistor is biased in the saturation region at VGS 4 V. (a) Calculate-example-4
User Zalom
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