Question

All MOS devices are subject to damage from:________

a. excessive heat
b. electrostatic discharge
c. excessive voltage
d. all of these

Answer 1

d. all of these

Step-by-step explanation:

Electrostatic discharge will generally produce excess voltage in a local area that results in excessive current and excessive heat. It will blast a crater in an MOS device, or melt bond wires, or cause damage of other sorts. In short, MOS devices are subject to damage from "all of these."