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An n- channel enhancement- mode MOSFET with 50 nm thick HfO2 high- k gate dielectric (Pr = 25) has a flat band voltage of 0.5 V, and substrate doping of 1018 cm-3. The intrinsic carrier concentration is
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An n- channel enhancement- mode MOSFET with 50 nm thick HfO2 high- k gate dielectric (Pr = 25) has a flat band voltage of 0.5 V, and substrate doping of 1018 cm-3. The intrinsic carrier concentration is 1011 cm-3, effective electron channel mobility is 250 cm2/V­s, and Pr = 15. What is the drive current for a 50 om wide and 2 om long device at VG = 3 V and VD = 0.05 V? What is the saturation current at this gate bias?

User Jitendragarg
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An n- channel enhancement- mode MOSFET with 50 nm thick HfO2 high- k gate dielectric-example-1
An n- channel enhancement- mode MOSFET with 50 nm thick HfO2 high- k gate dielectric-example-2
An n- channel enhancement- mode MOSFET with 50 nm thick HfO2 high- k gate dielectric-example-3
An n- channel enhancement- mode MOSFET with 50 nm thick HfO2 high- k gate dielectric-example-4
User Amexn
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