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What ND doping level corresponds to the maximum open circuit voltage (PVCDROM voltage losses due to recombination)?

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Final answer:

The maximum open circuit voltage in a PV cell pertains to the ND doping level that minimizes recombination losses, enabling most charge carriers to contribute to the electric current. The current is affected by dopant levels, the Maxwell-Boltzmann distribution, and the electric field strength.

Step-by-step explanation:

The question relates to the maximum open circuit voltage in a photovoltaic (PV) cell, which is influenced by the doping level of the material and its characteristic semiconductor physics. Maximum open circuit voltage corresponds to the point where recombination losses are minimized, allowing the majority of charge carriers to contribute to the electric current instead of recombining. The terminology used such as 'ND doping level' and 'recombination' refers to the number of donor atoms in an n-type semiconductor that contribute free electrons and the process where electrons and holes combine resulting in no contribution to current flow, respectively. For a diode, the current can be modelled by the equation I = Ne-eV/kBT where I is the current, N is the number of negatively charged majority carriers (electrons), e is the charge of an electron, V is the potential barrier, kB is the Boltzmann constant, and T is the temperature in Kelvin.

Furthermore, several physics concepts are mentioned such as the Maxwell-Boltzmann distribution, electric field strength in air, and the relation between photon energy and accelerating voltage. These relate to determining the behavior of charge carriers in a semiconductor, the limitations of an electric field in air, and the energy considerations in a photovoltaic cell.

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