In a p + − njunction, the n side has a donor concentration of 1 × 1016 cm−3 . If ni = 1 × 1010 cm−3 , the relative dielectric constant Pr = 12, Dn = 50 cm2/s, Dp = 20 cm2/s, and the electron and hole minority carriers have lifetimes of τ = 100 ns and 50 ns respectively, and a forward bias of 0.6 V, calculate the hole diffusion current density 2µm away from the depletion edge on the n-side. If we double the p + doping, what effect will it have on the hole diffusion current?