Question

The following electrical characteristics have been determined for both intrinsic and p-type extrinsic gallium antimonide (GaSb) at room temperature: σ (????∙m) –1 n (m–3 ) p (m–3 ) Intrinsic 8.9 × 10^4 8.7 × 10^23 8.7 × 10^23Extrinsic 2.3 × 10^5 7.6 × 10^22 1.0 × 10^25 (p-type)Calculate electron and hole mobilities.

Answer 1

0.5m^2/Vs and 0.14m^2/Vs

Step-by-step explanation:

To calculate the mobility of electron and mobility of hole for gallium antimonide we have,

`\sigma = n|e|\mu_e+p|e|\mu_h` (S)

Where

e= charge of electron

n= number of electrons

p= number of holes

`\mu_e=` mobility of electron

`\mu_h=`mobility of holes

`\sigma =` electrical conductivity

Making the substitution in (S)

Mobility of electron

`8.9*10^4=(8.7*10^(23)*(-1.602*10^(-19))*\mu_e)+(8.7*10^(23)*(-1.602*10^(-19))*\mu_h)`

`0.639=\mu_e+\mu_h`

Mobility of hole in (S)

`2.3*10^5 = (7.6*10^(22)*(-1.602*10^(-19))*\mu_e)+(1*10^(25)*(-1.602*10^(-19)*\mu_h))`

`0.1436 = 7.6*10^(-3)\mu_e+\mu_h`

Then, solving the equation:

`0.639=\mu_e+\mu_h` (1)

`0.1436 = 7.6*10^(-3)\mu_e+\mu_h` (2)

We have,

Mobility of electron
`\mu_e = 0.5m^2/V.s`

Mobility of hole is
`\mu_h = 0.14m^2/V.s`