Final answer:
The approximate value of the reverse saturation current of a silicon diode at an increased temperature can be calculated using the equation I = Io * exp((qV)/(kT)), where Io is the reverse saturation current, q is the electronic charge, V is the voltage across the diode, k is Boltzmann's constant, and T is the temperature in Kelvin.
Step-by-step explanation:
In the reverse-bias region of a silicon diode, the saturation current is about 0.1 μA at a temperature of 20°C. To determine its approximate value when the temperature is increased by 40°C, we can use the equation:
I = Io * exp((qV)/(kT)), where I is the current, Io is the reverse saturation current, q is the electronic charge, V is the voltage across the diode, k is Boltzmann's constant, and T is the temperature in Kelvin.
Since the saturation current is independent of the voltage and only depends on the temperature, we can use the same value of 0.1 μA as Io. Plugging in the appropriate values, we have:
I = (0.1 μA) * exp((qV)/(k * (20°C + 40°C + 273.15)))
I ≈ 0.1 μA * exp((qV)/(k * 333.15 K))
where K is Kelvin, q is the charge of an electron, and k is Boltzmann's constant.