Answer:
Here are the steps on how to calculate the junction capacitance of a Si p-n junction with a reverse bias of 10 V:
1. Calculate the depletion width.
The depletion width is the width of the region in which there are no free charge carriers. It can be calculated using the following formula:
```
W = √(2εεoV/qN)
```
where:
* W is the depletion width in meters
* ε is the permittivity of silicon (8.854 × 10-12 F/m)
* εo is the permittivity of free space (8.854 × 10-12 F/m)
* V is the reverse bias voltage in volts
* q is the elementary charge (1.602 × 10-19 C)
* N is the doping concentration in cm-3
In this case, the reverse bias voltage is 10 V and the doping concentration is 1015 cm-3. Plugging these values into the formula, we get:
W = √(2 × 8.854 × 10-12 F/m × 8.854 × 10-12 F/m × 10 V / 1.602 × 10-19 C × 1015 cm-3) = 1.249 μm
2. Calculate the junction capacitance.
The junction capacitance is the capacitance of the depletion region. It can be calculated using the following formula:
```
C = εA/W
```
where:
* C is the junction capacitance in Farads
* ε is the permittivity of silicon (8.854 × 10-12 F/m)
* A is the area of the junction in m2
* W is the depletion width in meters
In this case, the area of the junction is 10-2 cm2 and the depletion width is 1.249 μm. Plugging these values into the formula, we get:
```
C = 8.854 × 10-12 F/m × 10-2 cm2 / 1.249 μm = 7.12 pF
```
Therefore, the junction capacitance of a Si p-n junction with a reverse bias of 10 V is 7.12 pF.
Step-by-step explanation: