Question

Find the voltage Vg on the gate of the NMOSFET that will make the voltage Vx=10mV, when Vd=20mV. Assume the NMOSFET is in the deep triode region. The NMOSFET has the following characteristics: μn Cox=200uA/V2 Vth=0.5 V W/L=10/1.0

Answer 1

the voltage Vg on the gate of the NMOSFET that will result in Vx = 10mV when Vd = 20mV is 1.75V.

Step-by-step explanation:

To solve this problem, we can use the equation for the drain current of an NMOSFET in the deep triode region:

Id = μn Cox (W/L) (Vg - Vth - Vd/2) Vd

where μn is the mobility of electrons in the channel, Cox is the oxide capacitance per unit area, W/L is the width-to-length ratio of the transistor, Vg is the voltage on the gate, Vth is the threshold voltage, and Vd is the voltage between the drain and source terminals.

In this problem, we want to find the voltage Vg that will result in Vx = 10mV when Vd = 20mV. We can rearrange the equation above to solve for Vg:

Vg = (Vx/Vd + Vth + 1/2) / (μn Cox (W/L))

Substituting the given values, we get:

Vg = (10mV/20mV + 0.5V + 0.5V) / (200uA/V^2 * 10/1.0)

Vg = 1.75V

Therefore, the voltage Vg on the gate of the NMOSFET that will result in Vx = 10mV when Vd = 20mV is 1.75V