Question

In example 12.2 of Campbell, the atomic arrival rate of aluminum is compared to the molecular flux of water vapor. For the same evaporator, what crucible temperature would be required to set the aluminum atomic flux equal to the water vapor flux calculated in the example? What would be the growth rate of the aluminum film?

Answer 1

The question asks for the calculation of the evaporator temperature needed to align aluminum's atomic flux with water vapor's molecular flux and the corresponding growth rate of an aluminum film. The context is related to material science, specifically in the field of thin-film deposition and evaporative techniques.

Step-by-step explanation:

The question relates to the comparative analysis of atomic flux and molecular flux as mentioned in example 12.2 of Campbell, specifically regarding the evaporator temperatures needed to align the flux of aluminum with the flux of water vapor. Although the full context of example 12.2 is not provided, it is presumed to involve concepts such as the rate of evaporation or sublimation in a vacuum environment which is commonly used in thin-film deposition techniques within material science and semiconductor fabrication.

To determine the rate at which aluminum atoms would need to be evaporated to match a known flux of water vapor molecules, one would typically need to apply the equation for the rate of thermal evaporation, which depends on temperature, the materials' vapor pressure, and the area of the evaporating surface. Similarly, the growth rate of an aluminum film can be determined by knowing the atomic or molecular deposition rate and the geometry of the deposited film.