Final answer:
Increasing the forward bias on a p-n junction diode leads to a greater concentration of hole carriers in the n region near the junction.
Step-by-step explanation:
The question relates to the concept of hole concentration in semiconductor physics, particularly concerning the behavior of p-n junctions under forward bias conditions. When the forward bias is increased in a p-n junction diode, the electric field at the junction decreases, allowing more carriers (holes in the p-region and electrons in the n-region) to be injected across the junction. This results in a greater concentration of hole carriers in the n region near the junction. Hence, the correct answer is: the greater the increase of the forward bias, the greater the concentration of the hole concentration in the n region near the junction.