Final answer:
The ΔEN for germanium and nitrogen is 1.03, while the ΔEN for silicon and tellurium is 0.20. Silicon do ped with phosphorus results in n-type semiconductor, and when do ped with indium, it produces a p-type semiconductor.
Step-by-step explanation:
To determine the change in electronegativity (ΔEN) for germanium and nitrogen, we use the values from the periodic table of elements. Germanium (Ge) has an electronegativity of 2.01 and nitrogen (N) has an electronegativity of 3.04.
The ΔEN for germanium and nitrogen is therefore 3.04 - 2.01 = 1.03.
When considering the change in electronegativity for silicon and tellurium, silicon (Si) has an electronegativity of 1.90, and tellurium (Te) has an electronegativity of 2.1, resulting in a ΔEN of 2.1 - 1.90 = 0.20.
When it comes to semiconductor doping if silicon is do ped with (a) phosphorus, an n-type semiconductor is formed because phosphorus has five valence electrons, with one extra electron available for conduction.
When silicon is do ped with (b) indium, a p-type semiconductor is produced because indium has three valence electrons, creating a hole that accepts an electron during conduction.