Final answer:
While it's theoretically possible to use a thin layer of conductive ink on silicon to bridge two isolated regions of the wafer (p-type), it's not recommended. Silicon tends to be inkphobic, making adhesion challenging. Moreover, the performance and reliability of such a makeshift solution may be suboptimal compared to using PVD methods.
Step-by-step explanation:
Using a thin layer of conductive ink on silicon presents several challenges. Firstly, silicon is known to be inkphobic, meaning it repels ink, hindering proper adhesion. The silicon surface is typically oxidized, forming a silicon dioxide layer that acts as a barrier. The ink may struggle to bond effectively with the silicon surface, leading to poor adhesion and compromised conductivity.
Additionally, the choice of conductive ink is crucial. Conventional conductive inks may not provide the desired electrical properties and might not adhere well to the silicon substrate. Even if the ink manages to bridge the isolated regions initially, the long-term reliability and stability of the connection are questionable. Factors such as temperature variations, humidity, and mechanical stress could further impact the performance of the ink-bridged connection.
In contrast, physical vapor deposition (PVD) methods, though expensive, offer a more reliable and controlled approach. PVD allows for precise deposition of thin films onto the silicon substrate, ensuring strong adhesion and desired electrical characteristics. While the upfront cost may be a limitation, the long-term benefits in terms of performance and reliability outweigh the drawbacks of using a makeshift solution with conductive ink on silicon.