Final answer:
The question involves determining the intrinsic Fermi energy level's position in a semiconductor. However, with the given parameters and without specifics on electron effective mass or intrinsic carrier concentration.
Step-by-step explanation:
The student's question pertains to the position of the intrinsic Fermi energy level in a particular semiconductor. At absolute zero (T = 0 K), the Fermi energy (EF) represents the highest energy level occupied by electrons in a solid. At nonzero temperatures, the Fermi-Dirac distribution describes the occupation probability of energy states, with EF indicating the energy level at which the probability of occupation is 1/2. Since the electron effective mass (mh*) in the problem is given as 10 times the electron rest mass (me*), this indicates heavy holes, and a higher effective mass suggests that the energy bands are flatter, which can affect the density of states and energy levels.
For intrinsic semiconductors, the Fermi energy level lies around the middle of the bandgap at T = 0 K, but at finite temperatures like T = 300 K, it can shift due to the difference in the effective mass of electrons and holes. The problem, however, does not provide all necessary parameters, such as the electron effective mass or the intrinsic carrier concentration (which would impact the position of EF), hence a precise evaluation of the position of EF is not possible with the given data alone. It's important to note that intrinsic Fermi energy is expected to be very close to the center of the bandgap for a semiconductor with an energy gap (Eg) of 1.50 eV and at standard room temperature (300 K), assuming symmetric electron and hole effective masses.