Final answer:
The BR in the transistor parameter symbol V(BR)CEO stands for Breakdown Region, which refers to the maximum reverse bias voltage that can be applied across the collector-emitter junction without causing the transistor to break down. so, option 2 is the correct answer.
Step-by-step explanation:
In the transistor parameter symbol V(BR)CEO, the BR stands for Breakdown Region. This is related to the breakdown voltage in a transistor, which is the reverse bias voltage needed to cause an avalanche of current. V(BR)CEO indicates the breakdown voltage between the collector (C) and the emitter (E) with the base (B) left open (O), which is critical for ensuring the transistor functions within its safe operational limits. Voltage applied to the base acts as a valve to control electric current from the emitter to the collector.
In the transistor parameter symbol V(BR) CEO, the BR stands for Breakdown Region. The breakdown region refers to the region in a transistor where the voltage applied exceeds the breakdown voltage and causes a significant increase in current flow. In this context, V(BR) CEO represents the collector-emitter breakdown voltage, which is the maximum voltage that can be applied between the collector and emitter without damaging the transistor.