Question

Calculate the intrinsic concentration, intrinsic resistivity, and mean scattering times of electrons and holes in Ge ([Ar] 3d10 4s2 4p2) at 300K.

A) Intrinsic concentration: 2.5 x 10^13 cm^-3, Intrinsic resistivity: 4.0 Ω·cm, Mean scattering time: 3.5 x 10^-14 s
B) Intrinsic concentration: 1.2 x 10^16 cm^-3, Intrinsic resistivity: 2.8 Ω·cm, Mean scattering time: 2.0 x 10^-13 s
C) Intrinsic concentration: 3.0 x 10^14 cm^-3, Intrinsic resistivity: 5.5 Ω·cm, Mean scattering time: 1.8 x 10^-12 s
D) Intrinsic concentration: 5.5 x 10^15 cm^-3, Intrinsic resistivity: 3.2 Ω·cm, Mean scattering time: 2.5 x 10^-13 s

Answer 1

The intrinsic concentration, intrinsic resistivity, and mean scattering times of electrons and holes in Ge at 300K is A) Intrinsic concentration: 2.5 x 10^13 cm^-3, Intrinsic resistivity: 4.0 Ω·cm, Mean scattering time: 3.5 x 10^-14 s.

Step-by-step explanation:

The intrinsic concentration of a semiconductor is the concentration of electrons or holes in the material when there are no impurities present. In Ge (Germanium), the intrinsic concentration is 2.5 x 10^13 cm^-3 at 300K.

The intrinsic resistivity is a measure of how hard it is for charge carriers to move through a material. In Ge, the intrinsic resistivity is 4.0 Ω·cm at 300K.

The mean scattering time is the average time between collisions of charge carriers with impurities or lattice defects. In Ge, the mean scattering time of electrons and holes is 3.5 x 10^-14 s at 300K.

The correct answer is A) Intrinsic concentration: 2.5 x 10^13 cm^-3, Intrinsic resistivity: 4.0 Ω·cm, Mean scattering time: 3.5 x 10^-14 s.