Final answer:
The question asks for the time required to grow a 100nm oxide layer in wet oxygen at 1000 degrees, which involves calculations based on semiconductor fabrication knowledge. Without specific empirical data or graphs, one cannot provide an exact answer. Usually, relations like the Deal-Grove model are used for estimating the growth rate of oxide layers in such contexts.
Step-by-step explanation:
The question relates to the field of semiconductor fabrication and possibly pertains to the rate of oxide growth during thermal oxidation of silicon wafers, a common step in the production of semiconductor devices. The wet oxygen process at a temperature of 1000 degrees Celsius (not specified but likely Celsius) is intended to grow a silicon dioxide (SiO2) layer. The student is interested in the duration required to grow a 100nm oxide layer at these conditions.
Typically, to answer this question, one would refer to an empirical equation or a graph that defines the oxidation rate under specific conditions (temperature, pressure, oxygen concentration, and whether the oxygen is dry or wet). These details are often provided by industry standards or found in semiconductor processing textbooks. However, since specific details or a graph (like Figure 13.1) are not provided, a direct answer cannot be given. The student is likely expected to use known relations, like the Deal-Grove model or a similar equation (possibly denoted as Eq. 13.3), to calculate the growth of the oxide layer over time.