Question

Determine the diffusion current density of the minority carriers in units of (Amps/cm²) in

a semiconductor. Assume complete ionization and the parameters given below:
• Semiconductor: Silicon ·
ND = 4 × 10¹³ (cm³) ·
NA = 7 × 10¹⁵ (cm³) ·
Electron carrier concentration: n(x) = 1.10¹³ + 6-10¹³.x (cm⁻¹³)

Answer 1

The diffusion current density of minority carriers in a semiconductor can be determined using the formula I = nqAvd, where n is the number of charge carriers per unit volume, q is the charge of the carrier, A is the cross-sectional area, and vd is the drift velocity of the carriers. The electron carrier concentration in this case is given as n(x) = 1.10^13 + 6-10^13.x (cm^-13).

Step-by-step explanation:

The diffusion current density of minority carriers in a semiconductor can be determined using the formula I = nqAvd, where I is the current through a wire of cross-sectional area A, n is the number of charge carriers per unit volume, q is the charge of the carrier, A is the cross-sectional area, and vd is the drift velocity of the carriers. In this case, the given semiconductor is Silicon with ND = 4 × 10^13 (cm³) and NA = 7 × 10^15 (cm³). The electron carrier concentration is n(x) = 1.10^13 + 6-10^13.x (cm^-13).