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Consider a distributed amplifier using GaAs MESFETs with the following parameters: Ri = 5Ω, Rds = 200Ω, Cgs = 0.3pF, and gm = 40mS. Calculate and plot the gain from 0 to 20GHz for N=4,8, and 16 sections. Find the optimum value of N that will give maximum gain at 16GHz.

Assume Zd = Zg = Z0 = 50Ω

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Final answer:

The capacitance required to produce a resonant frequency of 1.00 GHz with an 8.00 nH inductor is approximately 25.33 pF.

Step-by-step explanation:

To calculate the capacitance needed to produce a resonant frequency of 1.00 GHz when using an 8.00 nH inductor, one can use the formula for the resonance frequency of an LC circuit, which is f = 1/(2π√(LC)), where f is the frequency, L is the inductance, and C is the capacitance.

To find the capacitance (C), we rearrange the formula to solve for C, giving us C = 1/((2πf)²L). Plugging in the values for the frequency (f = 1.00 GHz = 1.00×10¹ Hz) and the inductance (L = 8.00 nH = 8.00×10¹¹ H), we get:

C = 1/((2π×1×10¹)²×8.00×10¹¹ H)

Capacitance is calculated to be approximately 25.33 pF.

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