Question

An ideal silicon p-n junction has NA = 1.0x10¹⁶ cm⁻³ (p-side), ND = 1.0x10¹⁸ cm⁻³ (n-side), and a device cross-sectional area of 1.2x10⁻⁵ cm². Calculate the theoretical reverse saturation current at 300K. Use the parameters: diffusion coeff = 21 and 10 cm²/sec (e⁻ and h⁺, respectively), diffusion length = 0.0046 cm and 0.0032 cm (e⁻ and h⁺, respectively).

Please use 1×10¹⁰cm⁻³ as value for intrinsic Si

Answer 1

The reverse saturation current (Io) for the ideal silicon p-n junction is calculated based on the electronic charge, cross-sectional area of the diode, diffusion coefficients, diffusion lengths, and intrinsic carrier concentration, using the specified formula.

Step-by-step explanation:

To calculate the theoretical reverse saturation current (Io) for an ideal silicon p-n junction at 300K, we need to use the given doping concentrations (NA and ND), the device cross-sectional area, the diffusion coefficients for electrons (Dn) and holes (Dp), and the diffusion lengths (Ln and Lp), as well as the intrinsic carrier concentration of silicon (ni). The formula to use is:

Io = e * A * (Dn/Ln * ni^2/NA + Dp/Lp * ni^2/ND),

where e is the electronic charge (1.6 x 10^-19 coulombs), and A is the cross-sectional area of the diode. Plugging in the values:

Io = (1.6 x 10^-19 C) * (1.2 x 10^-5 cm²) * ((21 cm²/s / 0.0046 cm * (1 x 10^10 cm^-3)^2 / (1 x 10^16 cm^-3)) + (10 cm²/s / 0.0032 cm * (1 x 10^10 cm^-3)^2 / (1 x 10^18 cm^-3)))

After calculating the values within the parentheses and then the whole equation, you would obtain the reverse saturation current Io in amperes (A).