Final answer:
The Silicon Power Diode at 25°C exhibits an exponential increase in current under forward bias above the threshold voltage, and a constant negligible reverse saturation current under reverse bias until breakdown voltage is reached. Its behavior is non-linear, making it a non-ohmic device.
Step-by-step explanation:
Typical Characteristics of a Silicon Power Diode at 25°C
When sketching the current-voltage characteristics of a Silicon Power Diode at a junction temperature of 25°C, it's important to note two distinct operating conditions: forward bias and reverse bias. In the forward bias configuration, the current through the diode increases exponentially with applied voltage above a threshold, typically around 0.7 V for silicon diodes. This threshold is related to the potential energy of electrons across the p-n junction.
In contrast, under reverse bias, the reverse saturation current is very small, and the current remains almost constant until the breakdown voltage is reached. The breakdown voltage is a critical point where the diode suddenly starts to conduct a significant reverse current, potentially leading to device failure if the current is not controlled.
The behavior of the diode is non-linear, and this reflects the varying resistance of the diode under different biasing conditions—a key property that sets it apart as a non-ohmic device. The forward bias condition allows current to flow freely while the reverse bias condition restricts current flow, acting as a one-way valve for electric current in a circuit.