Question

A silicone diode in an adapter rectifying circuit has a carrier density of 10⁻2 in p material and 10⁻22 m⁻3 in n material, the temperature of the charger changes from 25 degrees Celsius to 40 degrees Celsius, find the change in barrier potential of the diode​

A) 0.70 V
B) 0.25 V
C) 0.45 V
D) 0.15 V

Answer 1

The change in the diode's barrier potential resulting from an increase in temperature from 25°C to 40°C is calculated to be 0.0315 V, which does not match any of the provided answer choices.

Step-by-step explanation:

Changing the temperature of a diode from 25 degrees Celsius to 40 degrees Celsius results in a change in the diode's barrier potential. The barrier potential is related to the temperature; typically, for silicon diodes, this potential decreases by about 2.1 mV per degree Celsius. To find the change in the barrier potential, you'd calculate the difference in temperatures (40°C - 25°C = 15°C) and multiply by the change in potential per degree (15°C x 2.1 mV/°C). This results in a change of 31.5 mV, or 0.0315 V. Since none of the answer choices closely match this calculated value, there might be an error in either the question specifics or the provided answer options. Therefore, none of the given options (0.70 V, 0.25 V, 0.45 V, or 0.15 V) can be determined as the correct answer.