For the deposition of metal films, two common methods include:
Sputtering: This technique involves bombarding a metal target with ions in a vacuum, causing atoms to be ejected and deposited as a thin film on a substrate.
Chemical Vapor Deposition (CVD): It entails the chemical reaction of gaseous metal precursors on a substrate, leading to the formation of a thin metal film.
Regarding silicon nitride films, two deposition methods are:
Low-Pressure Chemical Vapor Deposition (LPCVD): This method creates silicon nitride films through the decomposition of ammonia (NH3) and silane (SiH4) at low pressures and high temperatures.
Plasma-Enhanced Chemical Vapor Deposition (PECVD): It utilizes plasma to facilitate reactions between silicon precursor gases and nitrogen, resulting in silicon nitride film deposition at lower temperatures compared to LPCVD.