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Consider an n-channel MOSFET with the following parameters: k n 0. 18 mA/V2 , WL 8, and VT 0. 4 V. Determine the drain current ID for (a) VGS 0. 8 V, VDS 0. 2 V; (b) VGS 0. 8 V, VDS 1. 2 V; (c) VGS 0. 8 V, VDS 2. 5 V; and (d) VGS 1. 2 V, VDS 2. 5 V

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Answer:

Step-by-step explanation:

To determine the drain current (ID) for each of the given values of VGS and VDS, we can use the following equation:

ID = kn/2 * (VGS - VT)^2 * (1 + λVDS)

where kn is the process transconductance parameter, VT is the threshold voltage, λ is the channel-length modulation parameter, and VDS is the drain-source voltage. In this case, kn = 0.18 mA/V^2, WL = 8, and VT = 0.4 V.

(a) For VGS = 0.8 V and VDS = 0.2 V:

ID = kn/2 * (VGS - VT)^2 * (1 + λVDS)

= 0.18 mA/V^2 / 2 * (0.8 V - 0.4 V)^2 * (1 + 0.01 V^-1 * 0.2 V)

= 0.036 mA

Therefore, the drain current is 0.036 mA for VGS = 0.8 V and VDS = 0.2 V.

(b) For VGS = 0.8 V and VDS = 1.2 V:

ID = kn/2 * (VGS - VT)^2 * (1 + λVDS)

= 0.18 mA/V^2 / 2 * (0.8 V - 0.4 V)^2 * (1 + 0.01 V^-1 * 1.2 V)

= 0.0846 mA

Therefore, the drain current is 0.0846 mA for VGS = 0.8 V and VDS = 1.2 V.

(c) For VGS = 0.8 V and VDS = 2.5 V:

ID = kn/2 * (VGS - VT)^2 * (1 + λVDS)

= 0.18 mA/V^2 / 2 * (0.8 V - 0.4 V)^2 * (1 + 0.01 V^-1 * 2.5 V)

= 0.1733 mA

Therefore, the drain current is 0.1733 mA for VGS = 0.8 V and VDS = 2.5 V.

(d) For VGS = 1.2 V and VDS = 2.5 V:

ID = kn/2 * (VGS - VT)^2 * (1 + λVDS)

= 0.18 mA/V^2 / 2 * (1.2 V - 0.4 V)^2 * (1 + 0.01 V^-1 * 2.5 V)

= 1.1916 mA

Therefore, the drain current is 1.1916 mA for VGS = 1.2 V and VDS = 2.5 V.

User Kevin Li
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