Question

1. A silicon BJT is connected as shown in Fig 1, where RC = 3.6 k 2. VBE = 0.8 V. (10%)

(a) Predict Ic and specify Rp to establish Vce at 5 V.(5%)
(b) The BJT is said to be in forward-reverse bias. Explain what is meant by this. (5%)
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Answer 1

To assist the student, the collector current (Ic) must be predicted, and the base resistor (Rp) value is needed to achieve a Vce of 5 V, understanding that the BJT operates under 'forward-reverse bias' conditions, where the emitter-base is forward biased and collector-base is reverse biased.

Step-by-step explanation:

The student is working on a problem related to a silicon BJT (Bipolar Junction Transistor) and its biasing conditions. The student needs to predict the collector current (Ic) and determine the value of the base resistor (Rp) required to set the collector-emitter voltage (Vce) at 5 V, given that VBE is 0.8 V and RC is 3.6 kΩ. Additionally, the student is requiring an explanation for the term 'forward-reverse bias' within the context of a BJT. In a BJT, 'forward-reverse bias' refers to the biasing condition where the emitter-base junction is forward biased and the collector-base junction is reverse biased. This is the typical operation mode of a BJT when acting as an amplifier.

Answer 2

The circuit is missing attached below is the required circuit

answer :

a) Ic = 1.944 mA

Rp = 288.66 kΩ

b) The Emitter-base Junction of the BJT is forward biased while its collector-base junction is reverse biased

Step-by-step explanation:

Rc = 3.6 kΩ

VBE = 0.8 v

1) predict Ic and specify Rp to establish Vce at 5 V

we will apply Kirchhoff's voltage law to resolve this

solution attached below

b ) The BJT is said to be in Forward reverse bias because The Emitter-base Junction of the BJT is forward biased while its collector-base junction is reverse biased