Final answer:
To calculate the built-in voltage of a p-n junction, the Boltzmann constant, temperature, charge of an electron, and intrinsic carrier concentration are needed, which are not all provided. The width of the depletion region and stored charge also depend on various parameters like dielectric constant and doping concentrations, which are missing as well.
Step-by-step explanation:
To find the junction built-in voltage for a semiconductor diode, we use the relationship between the concentrations of acceptors and donors and the intrinsic carrier concentration.
Calculation of Built-in Voltage
For an n-type semiconductor with a donor concentration (ND) of 1016 cm-3, and a p-type semiconductor with an acceptor concentration (NA) of 1017 cm-3, the built-in potential (Vbi) can be found using the formula:
Vbi = (kT/q) ln(NAND/ni2)
where k is the Boltzmann constant, T is the temperature in kelvins, q is the charge of an electron, and ni is the intrinsic carrier concentration, given as 1.5 x 1010 cm-3.
However, since the temperature is not provided, we cannot calculate the exact built-in voltage without it.
Depletion Region and Stored Charge
The width of the depletion region and the extent in each of the p and n regions depend on the built-in voltage, dielectric constant, and doping concentrations. Additionally, the magnitude of the charge stored on either side of the junction can be found by considering the junction area and the charge density within the depletion region.
Again, without all of the necessary values, such as the permittivity of the semiconductor material and the temperature, we cannot compute the desired quantities.