Final answer:
The given statement “In N-type silicon, the Fermi level moves closer to the conduction band as temperature is increased” is True.
In an n-type semiconductor, the Fermi level moves closer to the conduction band as temperature increases due to thermal excitation of electrons.
Step-by-step explanation:
The n-type semiconductor has an extra electron in the conduction band due to donor impurities, like arsenic, which have more valence electrons than silicon. When the temperature is increased, these extra electrons gain enough thermal energy to easily transition into the conduction band, thus enhancing conductivity.
As a result, the Fermi level, which represents the highest energy level with electrons at absolute zero temperature, moves closer to the conduction band with increasing temperature. This is due to more electrons populating the energy states near the conduction band, shifting the probability distribution of electrons and hence the Fermi level upwards.