Final answer:
To graph normalized delay vs electrical effort for a 4-input NOR gate, consider the parasitic delay as the y-intercept and the logical effort as the slope. The specific values for the worst-case resistance scenario depend on the gate design and technology used.
Step-by-step explanation:
Normalized Delay vs Electrical Effort for a 4-Input NOR Gate
To draw a normalized delay (d) versus electrical effort (h) graph for a 4-input NOR gate with a worst-case resistance of R/2, we have to consider the fundamental concepts of logical effort and the delay model of digital circuits. The normalized delay (also known as parasitic delay) is the delay incurred by the gate itself, without considering the load it drives. The electrical effort represents the ratio of the capacitance at the output of the gate to the input capacitance of the gate.
For the simplest case, assuming a linear relationship, the graph of d vs h is a straight line with the equation:
d = p + gh, where 'p' is the parasitic delay and 'g' is the logical effort of the gate, and h is the electrical effort. Given that we have a 4-input NOR gate and a worst-case scenario, with a resistance of R/2, the slope 'g' would typically be higher than for a gate with minimum sized transistors because NOR gates have a worse effort-delay product as their input count increases.
The y-intercept of the graph, which is p, corresponds to the intrinsic delay of the 4-input NOR gate under the worst-case resistance condition. This will depend on the specific manufacturing process and the electrical characteristics of the transistors used. Without specific technology data, an exact numerical value for p or g can't be provided. However, for conceptual understanding, know that for a NOR gate 'p' is typically greater than 1, reflecting the multiple transistors in series and 'g' increases with the number of inputs.